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APT10026JLL PDF Datasheet浏览和下载

型号:
APT10026JLL
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下载PDF文件
内容描述:
功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。
[Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.]
文件大小:
111 K
文件页数:
5 Pages
品牌Logo:
品牌名称:
ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT10026JLL
1000V 30A 0.260
POWER MOS 7
®
R
MOSFET
G
S
D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
®
and Q
g
. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
T-
SO
27
2
"UL Recognized"
ISOTOP
®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT10026JLL
UNIT
Volts
Amps
1000
30
120
±30
±40
595
4.76
-55 to 150
300
30
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3200
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
1000
0.260
100
500
±100
3
5
(V
GS
= 10V, 15A)
Ohms
µA
nA
Volts
12-2003
050-7113 Rev A
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com