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APT4018BN PDF Datasheet浏览和下载

型号:
APT4018BN
PDF下载:
下载PDF文件
内容描述:
N沟道增强型高压功率MOSFET
[N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
文件大小:
56 K
文件页数:
4 Pages
品牌Logo:
品牌名称:
ADPOW [ ADVANCED POWER TECHNOLOGY ]
供应:
APT4018BN货源
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  • 批号
  • 数量
  • 封装
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  • 操作
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D
TO-247
G
S
APT4016BN 400V
®
31.0A 0.16
29.0A 0.18
POWER MOS IV
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
APT4018BN 400V
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: T
C
= 25°C unless otherwise specified.
APT
4016BN
APT
4018BN
UNIT
Volts
Amps
400
31
124
±30
360
2.9
400
29
116
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
Volts
Watts
W/°C
°C
-55 to 150
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
µA)
On State Drain Current
2
MIN
APT4016BN
APT4018BN
APT4016BN
APT4018BN
APT4016BN
APT4018BN
TYP
MAX
UNIT
Volts
400
400
31
Amps
I
D
(ON)
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
2
29
0.16
Ohms
R
DS
(ON)
0.18
250
1000
±100
2
4
µA
nA
Volts
I
DSS
I
GSS
V
GS
(TH)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0mA)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
050-4008 Rev C
0.34
40
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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