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MS1051 PDF Datasheet浏览和下载

型号:
MS1051
PDF下载:
下载PDF文件
内容描述:
射频与微波晶体管短波单边带应用
[RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS]
文件大小:
92 K
文件页数:
4 Pages
品牌Logo:
品牌名称:
ADPOW [ ADVANCED POWER TECHNOLOGY ]
供应:
MS1051货源
  • 供货商
  • IC型号
  • 厂家
  • 批号
  • 数量
  • 封装
  • 单价/备注
  • 操作
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1051
RF & MICROWAVE TRANSISTORS
HF SSB APLICATIONS
Features
30 MHz
12.5 VOLTS
P
OUT
= 100 WATTS
G
PE
= 12.0 dB MINIMUM
IMD = –30 dBc
GOLD METALLIZATION
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for HF communications. This
device utilizes state-of-the-art diffused emitter ballasting to
achieve extreme ruggedness under severe operating
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage TEmperature
Value
36
18
4.0
20
290
+200
-65 to +150
Unit
V
V
V
A
W
°C
°C
THERMAL DATA
R
TH(J-C)
Thermal Resistance Junction-case
0.6
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 11/2005